STP7NK30Z STMicroelectronics, STP7NK30Z Datasheet - Page 2

• Manufacturer Part Number: STP7NK30Z
• Description: MOSFET N-CH 300V 5A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP7NK30Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 300V
• On Resistance Rds(on): 900mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.8 Ohms
• Forward Transconductance Gfs (max / Min): 2.5 S
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STP7NK30Z - STF7NK30Z
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) I
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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V
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt (1)
SD
BV
ESD(G-S)
I
V
DM
P
V
V
V
E
T
I
DGR
TOT
I
I
AR
ISO
T
T
stg
GSO
DS
GS
AS
D
D
5.7A, di/dt 200A/µs, V
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
Parameter
j
= 25 °C, I
DD
V
(BR)DSS
Parameter
Parameter
D
C
GS
= I
= 25°C
, T
GS
j
= 20 k )
max)
AR
j
Igs=± 1mA (Open Drain)
= 0)
, V
T
JMAX.
DD
Test Conditions
C
C
= 25°C
= 100°C
= 50 V)
Min.
STP7NK30Z
30
TO-220
3.2
0.4
2.50
20
50
5
-
Max Value
-55 to 150
-55 to 150
Value
Typ.
2800
62.5
± 30
300
300
300
130
4.5
5
STF7NK30Z
TO-220FP
3.2 (*)
20 (*)
2500
6.25
5 (*)
0.16
20
Max.
°C/W
°C/W
Unit
Unit
W/°C
Unit
V/ns
mJ
°C
°C
°C
A
V
W
V
V
V
A
A
A
V
V