STD30PF03LT4 STMicroelectronics, STD30PF03LT4 Datasheet - Page 3

• Manufacturer Part Number: STD30PF03LT4
• Description: MOSFET P-CH 30V 24A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD30PF03LT4

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 5V
• Input Capacitance (ciss) @ Vds: 1670pF @ 25V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 23 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 24 A
• Power Dissipation: 70000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3158-2

STD30PF03LT4 - STD30PF03L-1
2
Note:
Electrical characteristics
(T
Table 4.
Table 5.
1.
For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
C
I
I
DS(on)
C
C
GS(th)
Q
Q
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DSS
GSS
Q
fs
oss
rss
iss
gs
gd
(1)
g
=25 °C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
V
V
V
V
Figure 15
I
V
V
V
V
V
V
D
GS
DS
DS
DD
DS
DS
GS
DS
GS
GS
= 250 µA, V
=15 V, I
=Max rating
=Max rating,Tc=100 °C
= V
= 10 V, I
= 5 V, I
=15 V, I
=25 V, f=1MHz, V
=5 V
= ±16 V
Test conditions
Test conditions
GS
, I
D
D
D
D
= 12 A
D
= 24 A
= 12 A
= 250 µA
GS
= 12 A
= 0
GS
=0
Electrical characteristics
Min.
Min.
30
1
0.025
0.032
1670
Typ.
18.6
Typ.
345
120
5.5
23
11
0.028
0.040
Max.
Max.
±
100
10
28
1
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
V
V
Ω
Ω
S
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