IRF7420PBF International Rectifier, IRF7420PBF Datasheet - Page 6
![MOSFET P-CH 12V 11.5A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7420PBF
Manufacturer Part Number
IRF7420PBF
Description
MOSFET P-CH 12V 11.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF7420PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 11.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
11.5A
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 4.5V
Input Capacitance (ciss) @ Vds
3529pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
P
Current, Drain
-11.5 A
Gate Charge, Total
38 nC
Package Type
SO-8
Polarization
P-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
14 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
291 ns
Time, Turn-on Delay
8.8 ns
Transconductance, Forward
32 S
Voltage, Breakdown, Drain To Source
-12 V
Voltage, Drain To Source
–12 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±8 V
Transistor Polarity
P Channel
Continuous Drain Current Id
11.5A
Drain Source Voltage Vds
12V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-900mV
Rohs Compliant
Yes
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
14 mOhms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
- 11.5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
225 ns
Gate Charge Qg
38 nC
Minimum Operating Temperature
- 55 C
Rise Time
8.8 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7420PBF
Manufacturer:
IR
Quantity:
20 000
6
0.025
0.020
0.015
0.010
0.005
Fig 14a. Basic Gate Charge Waveform
Fig 12. Typical On-Resistance Vs.
V
G
0.0
Q
GS
-V GS, Gate -to -Source Voltage (V)
Gate Voltage
2.0
Q
Charge
Q
GD
G
4.0
I D = -11.5A
6.0
8.0
0.08
0.06
0.04
0.02
0
Fig 14b. Gate Charge Test Circuit
Fig 13. Typical On-Resistance Vs.
0.0
12V
V
GS
V GS = -1.8V
Same Type as D.U.T.
Current Regulator
10.0
.2µF
-ID , Drain Current ( A )
Drain Current
50KΩ
-3mA
Current Sampling Resistors
20.0
.3µF
I
G
V GS = -2.5V
30.0
V GS = -4.5V
D.U.T.
I
D
www.irf.com
40.0
+
-
V
DS
50.0