IRF7420PBF International Rectifier, IRF7420PBF Datasheet - Page 4
![MOSFET P-CH 12V 11.5A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7420PBF
Manufacturer Part Number
IRF7420PBF
Description
MOSFET P-CH 12V 11.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF7420PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 11.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
11.5A
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 4.5V
Input Capacitance (ciss) @ Vds
3529pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
P
Current, Drain
-11.5 A
Gate Charge, Total
38 nC
Package Type
SO-8
Polarization
P-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
14 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
291 ns
Time, Turn-on Delay
8.8 ns
Transconductance, Forward
32 S
Voltage, Breakdown, Drain To Source
-12 V
Voltage, Drain To Source
–12 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±8 V
Transistor Polarity
P Channel
Continuous Drain Current Id
11.5A
Drain Source Voltage Vds
12V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-900mV
Rohs Compliant
Yes
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
14 mOhms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
- 11.5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
225 ns
Gate Charge Qg
38 nC
Minimum Operating Temperature
- 55 C
Rise Time
8.8 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7420PBF
Manufacturer:
IR
Quantity:
20 000
4
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
100
0.1
500
10
1
0
0.2
Fig 7. Typical Source-Drain Diode
1
T = 150 C
J
Fig 5. Typical Capacitance Vs.
-V
Coss
Crss
Ciss
SD
0.4
-V DS , Drain-to-Source Voltage (V)
Drain-to-Source Voltage
°
,Source-to-Drain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss
C oss = C ds + C gd
0.6
= C gd
T = 25 C
J
10
0.8
f = 1 MHZ
°
V
1.0
GS
= 0 V
1.2
100
1000
100
Fig 8. Maximum Safe Operating Area
10
6
5
4
3
2
1
0
1
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
C
J
= 25 C °
= 150 C
OPERATION IN THIS AREA LIMITED
-11.5A
Gate-to-Source Voltage
-V
DS
10
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
1
20
BY R
DS(on)
V
V
DS
DS
30
=-9.6V
=-6V
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10
100us
1ms
10ms
40
100
50