STF2HNK60Z STMicroelectronics, STF2HNK60Z Datasheet - Page 3

• Manufacturer Part Number: STF2HNK60Z
• Description: MOSFET N-CH 600V 2A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STF2HNK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2 A
• Power Dissipation: 20000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 1A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 4.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area
2.
Table 2.
Table 3.
V
Symbol
R
dv/dt
R
R
Symbol
ESD(G-S)
I
V
P
V
DM
V
thj-case
V
T
thj-amb
thj-lead
I
DGR
E
T
I
I
TOT
SD
I
T
ISO
stg
DS
GS
D
D
AR
AS
J
l
(1)
(2)
2A, di/dt 200A/µs, V
Drain-Source Voltage (V
Drain-gate Voltage (R
Gate-Source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate Source ESD (HBM-C=100pF, R=1.5k
Insulation withstand voltage (DC)
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
Maximum lead temperature for soldering
purpose
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Thermal resistance junction-lead Max
Absolute maximum ratings
Thermal data
Avalanche data
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
Single pulse avalanche energy (starting
Tj=25°C, I
D
=I
AR
DD
, V
Parameter
Parameter
DD
C
GS
=50V)
= 25°C
V
(BR)DSS
GS
= 20k )
= 0)
C
C
=100°C
= 25°C
IPAK/DPAK TO-220FP TO-92
IPAK/DPAK TO-220FP TO-92
1.26
0.36
2.77
2.0
100
45
--
8
--
300
-55 to 150
Value
Value
2000
600
600
±30
4.5
120
2
2500
1.26
0.16
6.25
2.0
62.5
20
8
--
Electrical ratings
0.025
0.32
260
0.5
120
--
2
3
40
--
W/°C
°C/W
°C/W
°C/W
V/ns
Unit
Unit
mJ
°C
°C
W
V
V
V
A
A
A
V
V
A
3/16