STD25NF10LT4 STMicroelectronics, STD25NF10LT4 Datasheet

MOSFET N-CH 100V 25A DPAK

STD25NF10LT4

Manufacturer Part Number
STD25NF10LT4
Description
MOSFET N-CH 100V 25A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Type
Power MOSFETr
Datasheet

Specifications of STD25NF10LT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 12.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
52nC @ 5V
Input Capacitance (ciss) @ Vds
1710pF @ 25V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.035 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
24 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
25 A
Power Dissipation
100000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.035Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±16V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3156-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD25NF10LT4
Manufacturer:
ST
Quantity:
30 000
Part Number:
STD25NF10LT4
Manufacturer:
STMicroelectronics
Quantity:
1 890
Part Number:
STD25NF10LT4
Manufacturer:
ST
Quantity:
20 000
Order codes
General features
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.
Applications
July 2006
STD25NF10L
Exceptional dv/dt capability
100% avalanche tested
Low threshold device
Logic level device
Switching application
Type
STD25NF10LT4
Part number
V
100V
DSS
Low gate charge STripFET™ II Power MOSFET
< 0.035Ω
R
DS(on)
D25NF10L
Marking
N-channel 100V - 0.030Ω - 25A - DPAK
25A
I
D
Rev 2
Internal schematic diagram
Package
DPAK
STD25NF10L
DPAK
1
3
Tape & reel
Packaging
www.st.com
1/13
13

Related parts for STD25NF10LT4

STD25NF10LT4 Summary of contents

Page 1

... Computer application also intended for any application with low gate charge drive requirements. Applications ■ Switching application Order codes Part number STD25NF10LT4 July 2006 N-channel 100V - 0.030Ω - 25A - DPAK Low gate charge STripFET™ II Power MOSFET R I DS(on) D < 0.035Ω ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STD25NF10L 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS (1) I Drain current (continuous Drain current (continuous ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...

Page 5

STD25NF10L Table 5. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/13 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STD25NF10L ...

Page 7

STD25NF10L Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized breakdown voltage ...

Page 8

Test circuit 3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/13 Figure 14. Gate charge test circuit Figure 16. ...

Page 9

STD25NF10L 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on ...

Page 10

Package mechanical data DIM (L1 10/13 DPAK MECHANICAL DATA mm. MIN. TYP MAX. 2.2 2.4 0.9 1.1 0.03 0.23 0.64 0.9 ...

Page 11

STD25NF10L 5 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. A0 6 1.5 D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7.9 P2 1.9 R ...

Page 12

Revision history 6 Revision history Table 6. Revision history Date 21-Jun-2004 03-Jun-2006 12/13 Revision 1 Preliminary version 2 New template, no content change STD25NF10L Changes ...

Page 13

... STD25NF10L Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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