IRF6712STRPBF International Rectifier, IRF6712STRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF6712STRPBF
• Description: MOSFET N-CH 25V 17A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF6712STRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2.4V @ 50µA
• Gate Charge (qg) @ Vgs: 18nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1570pF @ 13V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SQ
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 3.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.9V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 8.7 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 36 W
• Gate Charge Qg: 13 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0049Ohm
• Drain-source On-volt: 25V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -40C to 150C
• Operating Temperature Classification: Automotive
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: Direct-FET SQ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
10000
1000
1000
1000
0.01
Fig 6. Typical Transfer Characteristics
100
100
100
0.1
0.1
10
10
Fig 4. Typical Output Characteristics
1
1
0.1
1
1
≤ 60µs PULSE WIDTH
Tj = 25°C
V DS = 15V
≤60µs PULSE WIDTH
T J = 150°C
T J = 25°C
T J = -40°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
C iss
C oss
C rss
2.5V
2
1
f = 1 MHZ
10
3
10
TOP
BOTTOM
4
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
100
5
Fig 7. Normalized On-Resistance vs. Temperature
1000
100
2.0
1.5
1.0
0.5
25
20
15
10
10
1
5
0
-60 -40 -20 0
0.1
0
Fig 5. Typical Output Characteristics
Fig 9. Typical On-Resistance Vs.
≤ 60µs PULSE WIDTH
Tj = 150°C
I D = 17A
T J = 25°C
Drain Current and Gate Voltage
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
2.5V
I D , Drain Current (A)
V GS = 10V
V GS = 4.5V
50
1
20 40 60 80 100 120 140 160
100
10
TOP
BOTTOM
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
www.irf.com
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
150