IRLU014NPBF International Rectifier, IRLU014NPBF Datasheet - Page 3

• Manufacturer Part Number: IRLU014NPBF
• Description: MOSFET N-CH 55V 10A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU014NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 140 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.9nC @ 5V
• Input Capacitance (ciss) @ Vds: 265pF @ 25V
• Power - Max: 28W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU014NPBF

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100
100
0.1
0.1
10
10
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
1
1
2.0
0.1
TOP
BOTTOM
BOTTOM 2.5V
TOP
V
V
DS
VGS
15V
12V
10V
7.0V
5.0V
4.5V
2.7V
2.0V
GS
VGS
5.0V
4.5V
3.5V
3.0V
2.7V
15V
10V
4.0
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
1
6.0
T = 25 C
J
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
DS
J
2.5V
T = 175 C
10
= 50V
°
J
8.0
°
°
10.0
100
100
Fig 2. Typical Output Characteristics
0.1
10
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20 0
TOP
BOTTOM
BOTTOM 2.5V
TOP
I =
D
V
10A
DS
VGS
15V
12V
10V
7.0V
5.0V
4.5V
2.7V
2.0V
VGS
5.0V
4.5V
3.5V
3.0V
2.7V
T , Junction Temperature ( C)
15V
10V
Vs. Temperature
J
, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
1
20µs PULSE WIDTH
T = 175 C
J
2.5V
10
°
V
°
GS
=
10V
3
100