IRLU014NPBF International Rectifier, IRLU014NPBF Datasheet - Page 2

• Manufacturer Part Number: IRLU014NPBF
• Description: MOSFET N-CH 55V 10A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU014NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 140 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.9nC @ 5V
• Input Capacitance (ciss) @ Vds: 265pF @ 25V
• Power - Max: 28W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU014NPBF


‚
ƒ
V
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
I
V
t
Q
t
L
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
t
L
C
C
C
(BR)DSS
SM
on
S
rr
DSS
GSS
d(on)
r
d(off)
f
D
S
fs
SD
(BR)DSS
DS(on)
GS(th)
rr
iss
oss
rss
Repetitive rating; pulse width limited by
Starting T
I
g
gs
gd
2
R
T
max. junction temperature. ( See fig. 11 )
SD
(BR)DSS
J
G
≤ 175°C
≤ 6.0A, di/dt ≤ 210A/µs, V
= 25Ω, I
,
/∆T
J
J
= 25°C, L = 1.96mH
Internal Drain Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
AS
= 6A. (See Figure 12)
Parameter
Parameter
DD
≤
J
= 25°C (unless otherwise specified)
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
1.0
3.1
–––
–––
–––
–––
–––
–––
55
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
„
…
This is applied for I-PAK, L
Pulse width ≤ 300µs; duty cycle ≤ 2%.
0.056 –––
Typ. Max. Units
–––
–––
–––
lead and center of die contact
–––
––– 0.14
––– 0.21
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
265
6.5
4.5
7.5
48
37
47
12
23
80
38
–––
10
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
1.3
7.9
1.4
4.4
56
71
25
–––
40
V/°C
nS
nC
µA
nA
nC
nH
pF
ns
Ω
V
V
V
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact†
V
V
ƒ = 1.0MHz, See Fig. 5
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 6A
= 6A
= 25°C, I
= 25°C, I
= 4.5Ω, See Fig. 10 „
= 6.2Ω, V
= 0V, I
= 10V, I
= 4.5V, I
= V
= 25V, I
= 55V, V
= 55V, V
= 16V
= -16V
= 44V
= 5.0V, See Fig. 6 and 13 „
= 28V
= 0V
= 25V
S
of D-PAK is measured between
GS
, I
D
S
F
D
D
D
Conditions
= 250µA
D
GS
GS
GS
= 6A, V
= 6A
Conditions
= 250µA
= 6A „
= 6A‡
= 5A „
= 5.0V
= 0V
= 0V, T
D
GS
www.irf.com
= 1mA
J
= 0V „
= 150°C
G
G
S
+L
D
D
S
)
S
D