IRFR3711PBF International Rectifier, IRFR3711PBF Datasheet - Page 5

• Manufacturer Part Number: IRFR3711PBF
• Description: MOSFET N-CH 20V 100A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3711PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2980pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 120 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 29 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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120
100
0.01
0.1
80
60
40
20
10
0.00001
0
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
LIMITED BY PACKAGE
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.001
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
r
J
≤ 0.1 %
≤ 1
0.01
DM
x Z
1
thJC
P
2
t
DM
d(off)
+ T
C
t
1
t
f
t
2
+
-
5
0.1