IRFR18N15DTRPBF International Rectifier, IRFR18N15DTRPBF Datasheet - Page 6
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IRFR18N15DTRPBF
Manufacturer Part Number
IRFR18N15DTRPBF
Description
MOSFET N-CH 150V 18A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR18N15DTRRP.pdf
(11 pages)
Specifications of IRFR18N15DTRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
18 A
Power Dissipation
110 W
Mounting Style
SMD/SMT
Gate Charge Qg
28 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
6
V
Fig 13a. Basic Gate Charge Waveform
I
AS
G
Q
GS
R G
20V
V DS
t p
t p
Q
Charge
Q
I AS
GD
G
D.U.T
0.01 Ω
L
V
(BR)DSS
15V
DRIVER
+
-
V DD
A
500
400
300
200
100
0
25
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
Starting T , Junction Temperature ( C)
12V
V
GS
50
Same Type as D.U.T.
Current Regulator
.2µF
Vs. Drain Current
J
75
50KΩ
3mA
Current Sampling Resistors
.3µF
I
G
100
D.U.T.
I
D
125
TOP
BOTTOM
www.irf.com
+
-
V
DS
150
°
4.4A
9.0A
I D
11A
175