IRFR18N15DTRPBF International Rectifier, IRFR18N15DTRPBF Datasheet - Page 10
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IRFR18N15DTRPBF
Manufacturer Part Number
IRFR18N15DTRPBF
Description
MOSFET N-CH 150V 18A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR18N15DTRRP.pdf
(11 pages)
Specifications of IRFR18N15DTRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
18 A
Power Dissipation
110 W
Mounting Style
SMD/SMT
Gate Charge Qg
28 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
10
Notes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
For recommended footprint and soldering techniques refer to application note #AN-994.
When mounted on 1" square PCB (FR-4 or G-10 Material).
Repetitive rating; pulse width limited by
I
R
max. junction temperature.
T
Starting T
SD
J
G
≤ 175°C
≤ 11A, di/dt ≤ 170A/µs, V
= 25Ω, I
J
= 25°C, L = 3.3mH
AS
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
12.1 ( .476 )
11.9 ( .469 )
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
= 11A.
13 INCH
DD
TR
≤ V
(BR)DSS
FEED DIRECTION
,
16.3 ( .641 )
15.7 ( .619 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
Visit us at www.irf.com for sales contact information.12/04
as C
Data and specifications subject to change without notice.
oss
eff. is a fixed capacitance that gives the same charging time
oss
8.1 ( .318 )
7.9 ( .312 )
while V
DS
TRR
16 mm
is rising from 0 to 80% V
TRL
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TAC Fax: (310) 252-7903
DSS
www.irf.com