IRF7490TRPBF International Rectifier, IRF7490TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7490TRPBF
• Description: MOSFET N-CH 100V 5.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7490TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 5.4A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 3.2A, 10V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.4 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 37 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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+
-
D.U.T
Fig 16.
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+
-
SD
Vgs(th)
Qgs1 Qgs2
Vds
-
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G
Fig 17. Gate Charge Waveform
HEXFET
+
®
Qgd
+
Power MOSFETs
-
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Qgodr
P.W.
SD
DS
Waveform
Waveform
Ripple
for N-Channel
Body Diode
Period
Body Diode Forward
Diode Recovery
5%
Current
Vgs
dv/dt
Forward Drop
di/dt
Id
IRF7490
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
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