IRF7490TRPBF International Rectifier, IRF7490TRPBF Datasheet

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IRF7490TRPBF

Manufacturer Part Number
IRF7490TRPBF
Description
MOSFET N-CH 100V 5.4A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7490TRPBF

Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2.5W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
56nC @ 10V
Vgs(th) (max) @ Id
4V @ 250µA
Current - Continuous Drain (id) @ 25° C
5.4A
Drain To Source Voltage (vdss)
100V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
39 mOhm @ 3.2A, 10V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
5.4 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
37 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7490TRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7490TRPBF
0
Thermal Resistance
l
l
l
l
Absolute Maximum Ratings
www.irf.com
Applications
Benefits
Notes  through „ are on page 9
Symbol
R
R
Symbol
V
V
I
I
I
P
P
T
T
D
D
DM
J
STG
DS
GS
D
D
JL
JA
Effective C
App. Note AN1001)
and Current
@ T
@ T
High frequency DC-DC converters
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
@T
@T
Switching Losses
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
OSS
Junction-to-Drain Lead
Junction-to-Ambient
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Linear Derating Factor
Gate-to-Source Voltage
to Simplify Design, (See
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
S
S
S
V
100V
1
2
3
4
Top View
DSS
Typ.
300 (1.6mm from case )
–––
–––
HEXFET
8
6
5
7
39mW@V
-55 to + 150
R
D
D
D
A
D
A
DS(on)
Max.
± 20
20
100
4.3
2.5
1.6
43
5.4
®
IRF7490
GS
Power MOSFET
Max.
max
20
50
=10V
SO-8
mW/°C
Units
Units
37nC
°C/W
Q
°C
W
V
A
g
1

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IRF7490TRPBF Summary of contents

Page 1

Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce l Switching Losses Fully Characterized Capacitance Including l Effective C to Simplify Design, (See OSS App. Note AN1001) Fully Characterized Avalanche Voltage l and Current Absolute Maximum Ratings ...

Page 2

IRF7490 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...

Page 3

PULSE WIDTH Tj = 25°C 0.001 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100. 150°C 10.00 1. 25°C 0. ...

Page 4

IRF7490 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss Crss 100 ...

Page 5

Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE ( ...

Page 6

IRF7490 0.045 0.040 10V 0.035 0.030 Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U. 50K .2 F 12V . ...

Page 7

D.U.T + ƒ ‚ -  SD Fig 16. Vds Vgs(th) Qgs1 Qgs2 www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse „ Recovery Current - + D.U.T. V Waveform DS Re-Applied G + Voltage - Inductor ...

Page 8

IRF7490 SO-8 Package Details 0.25 [.010 NOTES: 1. DIMENSIONING & T OLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING ...

Page 9

SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ...

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