IRLR120NPBF International Rectifier, IRLR120NPBF Datasheet - Page 4

• Manufacturer Part Number: IRLR120NPBF
• Description: MOSFET N-CH 100V 10A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR120NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 185 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 48W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 265 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 11 A
• Power Dissipation: 39 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 22 ns
• Gate Charge Qg: 13.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 35 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLR/U120NPbF
4
100
800
600
400
200
0.1
10
1
0
Fig 7. Typical Source-Drain Diode
0.4
1
Fig 5. Typical Capacitance Vs.
C
C
C
Drain-to-Source Voltage
V
rss
V
iss
T = 175°C
oss
J
SD
DS
0.6
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
GS
iss
rss
oss
= 0V,
= C
= C
= C
0.8
gs
gd
ds
+ C
+ C
10
T = 25°C
J
gd
gd
f = 1MHz
1.0
, C
ds
SHORTED
1.2
V
GS
= 0V
100
1.4
A
A
100
0.1
10
15
12
9
6
3
0
1
Fig 8. Maximum Safe Operating Area
1
0
T
T
Single Pulse
I
Fig 6. Typical Gate Charge Vs.
D
C
J
= 6.0A
= 25°C
= 175°C
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
V
DS
Q , Total Gate Charge (nC)
5
G
, Drain-to-Source Voltage (V)
10
10
BY R
V
V
V
DS
DS
DS
DS(on)
= 80V
= 50V
= 20V
FOR TEST CIRCUIT
15
SEE FIGURE 13
100
10µs
10ms
100µs
1ms
www.irf.com
20
1000
25
A
A