STD2NK60Z-1 STMicroelectronics, STD2NK60Z-1 Datasheet - Page 3

• Manufacturer Part Number: STD2NK60Z-1
• Description: MOSFET N-CH 600V 1.4A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD2NK60Z-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 Ohm @ 700mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.4A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
V
Symbol
Symbol
Symbol
Symbol
Symbol
I
V
R
V
SDM
(BR)DSS
g
t
t
I
I
C
I
SD
GS(th)
DS(on)
C
C
r(Voff)
d(on)
Q
Q
fs
RRM
DSS
GSS
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
oss
t
t
t
iss
rss
rr
gs
gd
c
r
(1)
f
g
rr
(1)
(2)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
V
V
V
V
I
V
R
(Resistive Load see, Figure 3)
V
V
V
R
(Inductive Load see, Figure 5)
I
I
V
(see test circuit, Figure 5)
D
D
V
SD
SD
DS
DS
GS
DS
GS
DS
DD
DD
GS
DD
DD
G
G
DS
= 250 µA, V
= 0.5 A
= 4.7
= 4.7
= 1.5 A, V
= 1.5 A, di/dt = 100A/µs
= Max Rating
= Max Rating, T
= V
> I
= ± 30V
= 10V, I
= 225 V, I
= 360V, I
= 10V, R
= 360V, I
= 100V, T
= 25V, f = 1 MHz, V
D(on)
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Test Conditions
GS
, I
V
V
x R
D
D
GS
G
GS
D
D
GS
D
= 0.5 A
j
GS
= 250µA
= 4.7
= 150°C
= 1.5 A,
DS(on)max,
= 1.5 A,
= 10 V
= 0.5 A
= 10V
= 0
= 0
C
= 125 °C
GS
= 0
Min.
Min.
Min.
Min.
Min.
450
2.3
STD2NC45-1, STQ1NC45
Typ.
Typ.
27.5
Typ.
Typ.
Typ.
160
225
530
4.1
1.1
4.7
6.7
1.3
3.2
8.5
4.7
12
18
3
4
7
Max.
Max.
Max.
Max.
Max.
±100
4.5
1.6
3.7
1.5
6.0
50
10
1
Unit
Unit
Unit
Unit
Unit
nC
nC
nC
µC
µA
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
V
V
V
S
A
A
A
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