STS5PF30L STMicroelectronics, STS5PF30L Datasheet - Page 4

• Manufacturer Part Number: STS5PF30L
• Description: MOSFET P-CH 30V 5A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS5PF30L

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 5V
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.045ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.6V
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.08 Ohms
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3231-2

Electrical characteristics
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Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
C
I
I
DS(on)
C
C
GS(th)
Q
Q
GSS
DSS
Q
fs
oss
rss
iss
gs
gd
(1)
g
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
Drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
V
V
V
V
V
(see Figure 14)
D
C
GS
GS
GS
DS
DS
DS
DS
DS
GS
DD
GS
= 250 µA, V
=125°C
=Max rating,
= 15V, I
= Max rating
= ± 16V
= V
= 10V, I
= 4.5V, I
= 25V, f = 1 MHz,
= 0
= 5V
Test conditions
= 24V, I
Test conditions
GS
, I
D
D
D
D
D
=2.5A
= 2.5A
GS
= 250µA
= 2.5A
= 5A,
= 0
Min.
Min.
30
1
1350
Typ.
12.5
490
130
0.045
0.065
10
Typ.
5
3
1.6
Max.
STS5PF30L
0.055
0.075
±100
16
Max.
2.5
10
1
Unit
nC
nC
nC
Unit
pF
pF
pF
S
µA
µA
nA
V
V
Ω
Ω