STD4NK50ZT4 STMicroelectronics, STD4NK50ZT4 Datasheet - Page 3

• Manufacturer Part Number: STD4NK50ZT4
• Description: MOSFET N-CH 500V 3A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD4NK50ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 310pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 1.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3 A
• Power Dissipation: 45000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4103-2

ELECTRICAL CHARACTERISTICS (T
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
V
Symbol
Symbol
Symbol
Symbol
Symbol
I
oss eq.
V
R
V
SDM
(BR)DSS
g
t
t
t
I
I
C
I
SD
GS(th)
DS(on)
C
C
r(Voff)
d(on)
Q
Q
fs
d(off)
RRM
DSS
GSS
I
2. Pulse width limited by safe operating area.
3. C
Q
Q
SD
t
oss
t
t
t
t
iss
rss
rr
gs
gd
c
r
(1)
f
f
g
rr
(1)
V
(2)
DSS
oss eq.
(3)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1
CASE
I
V
V
V
V
V
V
V
V
R
(Resistive Load see, Figure 3)
V
V
V
R
(Resistive Load see, Figure 3)
V
R
(Inductive Load see, Figure 5)
I
I
V
(see test circuit, Figure 5)
D
V
SD
SD
DS
DS
GS
DS
GS
DS
GS
DD
DD
GS
DD
DD
DD
G
G
G
DS
= 1 mA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= 4.7
= 4.7
= 4.7
= 3 A, V
= 3 A, di/dt = 100A/µs
= Max Rating
= Max Rating, T
= V
= 15 V
= ± 20V
= 10V, I
= 0V, V
= 250 V, I
= 400 V, I
= 10 V
= 250 V, I
= 400V, I
= 40 V, T
= 25V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Test Conditions
GS
, I
,
V
V
V
GS
DS
I
D
GS
D
GS
D
GS
GS
D
j
D
D
= 1.5 A
D
= 50µA
= 1.5 A
= 150°C
= 0V to 400V
= 0
= 3 A,
= 0
= 10 V
= 10 V
= 1.5 A
= 3 A,
= 1.5 A
= 10V
C
= 125 °C
GS
= 0
Min.
Min.
Min.
Min.
Min.
500
3
oss
when V
Typ.
3.75
Typ.
Typ.
Typ.
Typ.
310
260
935
2.3
1.5
7.2
49
10
33
10
12
21
10
10
17
11
7
3
7
DS
increases from 0 to 80%
Max.
Max.
Max.
Max.
Max.
±10
2.7
1.6
4.5
50
12
1
3
Unit
Unit
Unit
Unit
Unit
nC
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
3/13