STN3PF06 STMicroelectronics, STN3PF06 Datasheet - Page 7
![MOSFET P-CH 60V 2.5A SOT223](/photos/5/48/54884/sot-223_sml.jpg)
STN3PF06
Manufacturer Part Number
STN3PF06
Description
MOSFET P-CH 60V 2.5A SOT223
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STN3PF06.pdf
(12 pages)
Specifications of STN3PF06
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
220 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 10V
Input Capacitance (ciss) @ Vds
850pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Forward Transconductance Gfs (max / Min)
1.5 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.5 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4116-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STN3PF06
Manufacturer:
STMicroelectronics
Quantity:
48 156
Company:
Part Number:
STN3PF06
Manufacturer:
ST MICROELECTRONICS
Quantity:
30 000
Part Number:
STN3PF06
Manufacturer:
ST
Quantity:
20 000
STN3PF06
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
Figure 11. Normalized on resistance vs
Capacitance variations
temperature
Electrical characteristics
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