IRFL4315PBF International Rectifier, IRFL4315PBF Datasheet - Page 5

• Manufacturer Part Number: IRFL4315PBF
• Description: MOSFET N-CH 150V 2.6A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL4315PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 185 mOhm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 420pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Channel Type: N
• Current, Drain: 2.6 A
• Gate Charge, Total: 12 nC
• Package Type: SOT-223
• Polarization: N-Channel
• Power Dissipation: 2.8 W
• Resistance, Drain To Source On: 185 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 20 ns
• Time, Turn-on Delay: 8.4 ns
• Transconductance, Forward: 3.5 S
• Voltage, Breakdown, Drain To Source: 150 V
• Voltage, Drain To Source: 150 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±30 V
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 185 m Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2.6 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 19 ns
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 21 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
0.1
10
0.00001
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Ambient Temperature
50
T
A
(THERMAL RESPONSE)
, Ambient Temperature (°C)
0.0001
SINGLE PULSE
75
100
°
0.001
125
t , Rectangular Pulse Duration (sec)
1
150
0.01
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.1
t
d(on)
1. Duty factor D =
2. Peak T
Notes:
t
r
IRFL4315PbF
1
J
= P
DM
x Z
t / t
1
t
thJA
d(off)
P
2
DM
+ T
10
t
f
A
t
1
t
2
+
-
5
100