IRFL4315PBF International Rectifier, IRFL4315PBF Datasheet - Page 2

• Manufacturer Part Number: IRFL4315PBF
• Description: MOSFET N-CH 150V 2.6A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL4315PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 185 mOhm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 420pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Channel Type: N
• Current, Drain: 2.6 A
• Gate Charge, Total: 12 nC
• Package Type: SOT-223
• Polarization: N-Channel
• Power Dissipation: 2.8 W
• Resistance, Drain To Source On: 185 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 20 ns
• Time, Turn-on Delay: 8.4 ns
• Transconductance, Forward: 3.5 S
• Voltage, Breakdown, Drain To Source: 150 V
• Voltage, Drain To Source: 150 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±30 V
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 185 m Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2.6 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 19 ns
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 21 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Diode Characteristics
IRFL4315PbF
Dynamic @ T
Avalanche Characteristics
Static @ T
E
I
V
R
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
AR
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
V
fs
AS
(BR)DSS
DS(on)
GS(th)
SD
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
2
(BR)DSS
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Leakage Current
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
3.5
Min. Typ. Max. Units
–––
–––
–––
–––
–––
0.19 –––
–––
–––
–––
–––
–––
–––
––– -100
–––
420
100
720
–––
–––
–––
160
2.1
6.8
8.4
12
21
20
19
25
48
98
61
–––
185
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
240
5.0
3.1
1.5
2.6
25
19
10
91
21
V/°C
m
µA
nA
nC
ns
pF
nC
ns
V
V
S
V
Typ.
–––
–––
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs ƒ
Reference to 25°C, I
I
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 1.6A
= 1.6A
= 25°C, I
= 25°C, I
= 15
= V
= 150V, V
= 120V, V
= 50V, I
= 120V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 10V
= 75V
= 10V ƒ
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 2.1A, V
= 1.6A
= 250µA
= 1.6A
= 1.6A
GS
GS
= 0V to 120V …
Max.
= 1.0V, ƒ = 1.0MHz
= 120V, ƒ = 1.0MHz
3.1
38
= 0V, T
= 0V
D
www.irf.com
= 1mA ƒ
GS
ƒ
J
G
= 0V ƒ
= 125°C
Units
mJ
A
S
D