STN3N45K3 STMicroelectronics, STN3N45K3 Datasheet - Page 4

• Manufacturer Part Number: STN3N45K3
• Description: MOSFET N-CH 450V 0.6A SOT-223
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STN3N45K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 600mA
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 6nC @ 10V
• Input Capacitance (ciss) @ Vds: 150pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.8 Ohms
• Drain-source Breakdown Voltage: 450 V
• Gate-source Breakdown Voltage: 3 V
• Continuous Drain Current: 0.6 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10649-2

Electrical characteristics
2
4/12
Electrical characteristics
(T
Table 5.
Table 6.
Table 7.
Symbol
V
Symbol
Symbol
C
V
R
t
t
(BR)DSS
d(on)
d(off)
C
I
I
C
C
Q
GS(th)
Q
= 25 °C unless otherwise specified)
DS(on
GSS
R
DSS
Q
t
t
oss
r
f
iss
rss
gs
gd
G
g
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer
capacitance
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Switching times
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 17206 Rev 2
V
R
(see
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
D
DS
DD
GS
DD
DS
DS
GS
DS
GS
G
= 1 mA, V
= 4.7 Ω, V
= Max rating
= Max rating, T
= 25 V, f = 1 MHz, V
= 10 V
= 225 V, I
= ± 20 V
= V
= 10 V, I
= 360 V, I
Figure
Figure
Test conditions
Test conditions
Test conditions
GS
, I
2)
3)
GS
D
D
GS
STN3N45K3, STQ3N45K3-AP, STU3N45K3
D
D
= 50 µA
= 0.5 A
= 0
= 0.5 A,
= 1.8 A,
= 10 V
C
=125 °C
GS
= 0
Min.
Min.
Min.
450
-
3
-
-
-
Typ.
TBD
TBD
TBD
TBD
Typ.
Typ.
TBD
TBD
TBD
3.75
150
3.2
30
6
6
Max.
Max.
± 10
Max
4.5
3.8
50
1
-
-
-
-
Unit
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
ns
ns
ns
ns
Ω
Ω
V
V