IRLML5203TRPBF International Rectifier, IRLML5203TRPBF Datasheet - Page 2
IRLML5203TRPBF
Manufacturer Part Number
IRLML5203TRPBF
Description
MOSFET P-CH 30V 3A SOT-23
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRLML5203TRPBF
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
1.25W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
14nC @ 10V
Vgs(th) (max) @ Id
2.5V @ 250µA
Current - Continuous Drain (id) @ 25° C
3A
Drain To Source Voltage (vdss)
30V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
98 mOhm @ 3A, 10V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.098Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Drain Current (max)
3A
Power Dissipation
1.25W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
Micro
Current, Drain
-3 A
Gate Charge, Total
9.5 nC
Polarization
P-Channel
Resistance, Drain To Source On
98 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
88 ns
Time, Turn-on Delay
12 ns
Transconductance, Forward
3.1 S
Voltage, Breakdown, Drain To Source
-30 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±20 V
Continuous Drain Current
3A
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
165 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Mounting Style
SMD/SMT
Gate Charge Qg
9.5 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRLML5203TRPBF
Manufacturer:
IR
Quantity:
36 000
Part Number:
IRLML5203TRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRLML5203TRPBF/H3J
Manufacturer:
IR
Quantity:
20 000
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
Notes:
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
SM
d(on)
d(off)
S
rr
r
f
DSS
fs
2
SD
(BR)DSS
GS(th)
iss
oss
rss
rr
g
gs
gd
DS(on)
(BR)DSS
Pulse width ≤ 400µs; duty cycle ≤
Repetitive rating; pulse width limited by
max. junction temperature.
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
-1.0
––– 0.019 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-30
Surface mounted on FR-4 board, t ≤
3.1
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
510
–––
9.5
2.3
1.6
17
12
12
18
88
52
71
43
–––
-2.5
-1.0
-5.0
100
–––
–––
–––
–––
–––
-1.2
–––
–––
–––
165
3.5
2.4
14
18
98
26
1.3
24
V/°C
mΩ
nC
nC
pF
ns
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = -100A/µs
showing the
T
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= -3.0A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= V
= -10V, I
= -24V, V
= -24V, V
= -24V
= -25V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V
= -15V
= -10V
= 0V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
D
= -1.3A, V
= -1.3A
D
GS
GS
= -250µA
= -3.0A
= -3.0A
= -2.6A
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V
S
D