IRLML5203TRPBF International Rectifier, IRLML5203TRPBF Datasheet - Page 6
![MOSFET P-CH 30V 3A SOT-23](/photos/5/48/54881/sot-23-3_sml.jpg)
IRLML5203TRPBF
Manufacturer Part Number
IRLML5203TRPBF
Description
MOSFET P-CH 30V 3A SOT-23
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRLML5203TRPBF
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
1.25W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
14nC @ 10V
Vgs(th) (max) @ Id
2.5V @ 250µA
Current - Continuous Drain (id) @ 25° C
3A
Drain To Source Voltage (vdss)
30V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
98 mOhm @ 3A, 10V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.098Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Drain Current (max)
3A
Power Dissipation
1.25W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
Micro
Current, Drain
-3 A
Gate Charge, Total
9.5 nC
Polarization
P-Channel
Resistance, Drain To Source On
98 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
88 ns
Time, Turn-on Delay
12 ns
Transconductance, Forward
3.1 S
Voltage, Breakdown, Drain To Source
-30 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±20 V
Continuous Drain Current
3A
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
165 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Mounting Style
SMD/SMT
Gate Charge Qg
9.5 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRLML5203TRPBF
Manufacturer:
IR
Quantity:
36 000
Part Number:
IRLML5203TRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRLML5203TRPBF/H3J
Manufacturer:
IR
Quantity:
20 000
Fig 11. Typical On-Resistance Vs. Gate
6
0.14
0.13
0.12
0.11
0.10
0.09
0.08
0.07
Fig 13a. Basic Gate Charge Waveform
V
4.0
G
Q
-V GS, Gate -to -Source Voltage (V)
6.0
GS
Voltage
8.0
Charge
Q
Q
GD
G
10.0
I D = -3.0A
12.0
14.0
16.0
0.40
0.30
0.20
0.10
0.00
Fig 12. Typical On-Resistance Vs. Drain
Fig 13b. Gate Charge Test Circuit
0
12V
V
GS
V GS = -4.5V
Same Type as D.U.T.
Current Regulator
.2µF
4
-I D , Drain Current (A)
50KΩ
-3mA
Current Sampling Resistors
Current
.3µF
I
G
8
V GS = -10V
D.U.T.
www.irf.com
I
D
12
+
-
V
DS
16