IRLML6402TRPBF International Rectifier, IRLML6402TRPBF Datasheet - Page 3

MOSFET P-CH 20V 3.7A SOT-23

IRLML6402TRPBF

Manufacturer Part Number
IRLML6402TRPBF
Description
MOSFET P-CH 20V 3.7A SOT-23
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRLML6402TRPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
65 mOhm @ 3.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.7A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Input Capacitance (ciss) @ Vds
633pF @ 10V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.065Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Drain Current (max)
3.7A
Power Dissipation
1.3W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
Micro
Channel Type
P
Current, Drain
–3.7 A
Gate Charge, Total
8 nC
Polarization
P-Channel
Resistance, Drain To Source On
0.065 Ohm
Resistance, Thermal, Junction To Case
100 °C/W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
588 ns
Time, Turn-on Delay
350 ns
Transconductance, Forward
6 S
Voltage, Breakdown, Drain To Source
-20 V
Voltage, Drain To Source
–20 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±12 V
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
65 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 3.7 A
Mounting Style
SMD/SMT
Gate Charge Qg
8 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLML6402PBFTR

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100
10
100
1
10
Fig 1. Typical Output Characteristics
0.1
Fig 3. Typical Transfer Characteristics
2.0
TOP
BOTTOM
-V
DS
-V
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
3.0
GS
, Drain-to-Source Voltage (V)
T = 25 C
, Gate-to-Source Voltage (V)
J
4.0
1
°
-2.25V
5.0
20µs PULSE WIDTH
T = 25 C
T = 150 C
V
20µs PULSE WIDTH
J
J
DS
10
6.0
= -15V
°
°
7.0
100
8.0
100
2.0
1.5
1.0
0.5
0.0
10
1
-60 -40 -20
0.1
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I =
TOP
BOTTOM
D
-V
-3.7A
DS
T , Junction Temperature ( C)
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
1
20 40
-2.25V
60 80 100 120 140 160
20µs PULSE WIDTH
T = 150 C
J
10
°
V
°
GS
=
-4.5V
3
100

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