IRLML6402TRPBF International Rectifier, IRLML6402TRPBF Datasheet

MOSFET P-CH 20V 3.7A SOT-23

IRLML6402TRPBF

Manufacturer Part Number
IRLML6402TRPBF
Description
MOSFET P-CH 20V 3.7A SOT-23
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets
1.IRLML6402TRPBF.pdf (8 pages)
2.IRLML6402TRPBF.pdf (4 pages)

Specifications of IRLML6402TRPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
65 mOhm @ 3.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.7A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Input Capacitance (ciss) @ Vds
633pF @ 10V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.065Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Drain Current (max)
3.7A
Power Dissipation
1.3W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
Micro
Channel Type
P
Current, Drain
–3.7 A
Gate Charge, Total
8 nC
Polarization
P-Channel
Resistance, Drain To Source On
0.065 Ohm
Resistance, Thermal, Junction To Case
100 °C/W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
588 ns
Time, Turn-on Delay
350 ns
Transconductance, Forward
6 S
Voltage, Breakdown, Drain To Source
-20 V
Voltage, Drain To Source
–20 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±12 V
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
65 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 3.7 A
Mounting Style
SMD/SMT
Gate Charge Qg
8 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLML6402PBFTR

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Part Number
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Price
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l
l
l
l
l
l
l
l
These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been incorporated
into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3™, is ideal for applications where printed
circuit board space is at a premium. The low profile (<1.1mm)
of the Micro3 allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
The thermal resistance and power dissipation are the best
available.
Thermal Resistance
V
I
I
I
P
P
E
V
T
R
www.irf.com
D
D
DM
J,
DS
D
D
AS
GS
θJA
@ T
@ T
Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
Lead-Free
Halogen-Free
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambientƒ
Parameter
Parameter
GS
GS
@ -4.5V
@ -4.5V
G
®
Typ.
75
HEXFET Power MOSFET
-55 to + 150
S
D
Max.
± 12
0.01
-3.7
-2.2
-20
-22
1.3
0.8
11
Micro3™
R
DS(on)
Max.
V
100
DSS
= 0.065Ω
= -20V
05/13/10
Units
Units
W/°C
mJ
°C
V
A
V
1

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IRLML6402TRPBF Summary of contents

Page 1

... Lead-Free l Halogen-Free l These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V 10 -2.25V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

Page 4

0V MHZ C iss = rss = C gd 800 C oss = Ciss 600 400 Coss 200 Crss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 SINGLE PULSE 1 (THERMAL RESPONSE) ...

Page 6

Id = -3.7A 0.06 0.04 0.02 2.0 3.0 4.0 5.0 -V GS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage 6 0.20 0.16 0.12 0.08 0.04 0.00 6.0 7.0 0 ...

Page 7

0.15 [0.006 Micro3 (SOT-23/TO-236AB) Part Marking Information ‚‡r†)ÃUuv†Ãƒh…‡Ã€h…xvtÃvs‚…€h‡v‚Ãhƒƒyvr†Ã‡‚Ãqr‰vpr†Ãƒ…‚qˆprqÃhs‡r…Ã!!%! 96U@Ã8P9@ Q6SUÃIVH7@S 8ˆÃXDS@ C6GPB@Ià S@@ YÃ2ÃQ6SUÃIVH7@SÃ8P9@ÃS@ ...

Page 8

TR FEED DIRECTION 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD ...

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