BUK7107-55ATE,118 NXP Semiconductors, BUK7107-55ATE,118 Datasheet - Page 13

MOSFET N-CH 55V 75A D2PAK

BUK7107-55ATE,118

Manufacturer Part Number
BUK7107-55ATE,118
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7107-55ATE,118

Package / Case
D²Pak, TO-263 (4 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
7 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
116nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
272W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
272000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057271118
BUK7107-55ATE /T3
BUK7107-55ATE /T3
NXP Semiconductors
8. Revision history
Table 7.
BUK7107-55ATE_2
Product data sheet
Document ID
BUK7107-55ATE_2
Modifications:
BUK7107_55ATE-01
(9397 750 09875)
Revision history
Release date
20090219
20020729
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 19 February 2009
Change notice
-
-
N-channel TrenchPLUS standard level FET
BUK7107-55ATE
Supersedes
BUK7107_55ATE-01
-
© NXP B.V. 2009. All rights reserved.
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