BUK7107-40ATC,118 NXP Semiconductors, BUK7107-40ATC,118 Datasheet - Page 4

• Manufacturer Part Number: BUK7107-40ATC,118
• Description: MOSFET N-CH 40V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7107-40ATC,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 7 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 108nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 140 A
• Power Dissipation: 272 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057269118; BUK7107-40ATC /T3; BUK7107-40ATC /T3

NXP Semiconductors
BUK7107-40ATC_2
Product data sheet
Fig 1.
Fig 3.
P
(%)
(A)
I D
der
120
10 3
10 2
10
80
40
1
0
function of mounting base temperature
Normalized total power dissipation as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
1
Limit R DSon = V DS /I D
Capped at 75 A due to package
50
100
150
T
mb
03na19
(°C)
Rev. 02 — 6 February 2009
200
DC
10
Fig 2.
160
120
I D
(A)
80
40
function of mounting base temperature
Normalized continuous drain current as a
0
N-channel TrenchPLUS standard level FET
0
Capped at 75A due to package
50
BUK7107-40ATC
V DS (V)
100
t p = 10 µs
100 µs
1 ms
10 ms
100 ms
150
© NXP B.V. 2009. All rights reserved.
T mb (°C)
03ne75
03ni63
10 2
200
4 of 15