RCX120N25 Rohm Semiconductor, RCX120N25 Datasheet - Page 6

• Manufacturer Part Number: RCX120N25
• Description: MOSFET N-CH 250V 12A TO-220FM
• Manufacturer: Rohm Semiconductor

Specifications of RCX120N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 12A
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220FM-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Continuous Drain Current: 12 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
 Measurement circuits
RCX120N25
Fig.1-1 Switching Time Measurement Circuit
Fig.2-1 Gate Charge Measurement Circuit
Fig.3-1 Avalanche Measurement Circuit
I
G(Const.)
R
R
G
G
V
V
GS
V
GS
GS
D.U.T.
D.U.T.
D.U.T.
I
AS
I
I
D
D
R
L
V
R
V
V
L
DD
DD
L
DD
V
V
DS
V
DS
DS
V
DD
V
V
GS
DS
V
GS
Fig.2-2 Gate Charge Waveform
t
V
E
Fig.1-2 Switching Waveforms
d(on)
G
AS
Fig.3-2 Avalanche Waveform
Q
=
gs
10%
1
2
t
50%
on
10%
L
Pulse width
6/6
Q
t
90%
r
gd
I
Q
AS
g
2
I
AS
V
90%
t
(BR)DSS
d(off)
V
(BR)DSS
Charge
t
- V
off
50%
DD
V
10%
t
90%
f
(BR)DSS
2011.10 - Rev.A
Data Sheet