RCX120N25 Rohm Semiconductor, RCX120N25 Datasheet - Page 2

• Manufacturer Part Number: RCX120N25
• Description: MOSFET N-CH 250V 12A TO-220FM
• Manufacturer: Rohm Semiconductor

Specifications of RCX120N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 12A
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220FM-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Continuous Drain Current: 12 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

*Pulsed
*Pulsed
Gate-source leakage
Drain-source breakdown voltage V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Forward Voltage
 Electrical characteristics (Ta = 25C)
Body diode characteristics (Source-Drain) (Ta = 25C)
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RCX120N25
Parameter
Parameter
Symbol
Symbol
R
V
l Y
(BR)DSS
C
t
t
I
I
DS (on)
C
C
Q
Q
V
GS (th)
d(on)
d(off)
GSS
Q
DSS
t
t
oss
SD
iss
rss
gd
fs
r
f
gs
g
l
*
*
*
*
*
*
*
*
*
*
3.25
Min.
Min.
250
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1800
Typ.
Typ.
180
100
60
33
65
45
20
35
15
12
-
-
-
-
-
-
2/6
Max.
100
Max.
235
1.5
10
5
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Unit
m
nC
nC
nC
nA
pF
pF
pF
A
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
V
V
f=1MHz
I
V
R
R
I
V
V
I
D
D
D
D
D
s
=12A, V
GS
DS
DS
DS
GS
GS
DD
GS
=1mA, V
=6A, V
=6A, V
=6A, V
L
G
=12A,
=20.83
=10
=250V, V
=10V, I
=25V
=30V, V
=0V
=10V
=10V
125V
Conditions
Conditions
GS
DS
DD
GS
GS
=10V
=10V
D
=0V
=1mA
125V
DS
=0V
GS
=0V
=0V
2011.10 - Rev.A
Data Sheet