BUK7508-55A,127 NXP Semiconductors, BUK7508-55A,127 Datasheet - Page 2

• Manufacturer Part Number: BUK7508-55A,127
• Description: MOSFET N-CH 55V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7508-55A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 76nC @ 0V
• Input Capacitance (ciss) @ Vds: 4352pF @ 25V
• Power - Max: 254W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 126 A
• Power Dissipation: 254000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055642127; BUK7508-55A; BUK7508-55A

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK7508-55A
Product data sheet
Pin
1
2
3
mb
Type number
BUK7508-55A
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
TO-220AB
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source avalanche
energy
gate-drain charge
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 14 June 2010
Simplified outline
SOT78 (TO-220AB)
…continued
V
Conditions
I
R
T
V
see
1 2
D
j(init)
GS
DS
GS
mb
= 75 A; V
Figure 13
= 44 V; T
= 0 V; I
= 50 Ω; V
3
= 25 °C; unclamped
N-channel TrenchMOS standard level FET
D
sup
= 25 A;
j
GS
= 25 °C;
≤ 55 V;
= 10 V;
Graphic symbol
BUK7508-55A
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
35
Version
SOT78
Max Unit
670
-
2 of 14
mJ
nC