BUK9606-55A,118 NXP Semiconductors, BUK9606-55A,118 Datasheet - Page 11

• Manufacturer Part Number: BUK9606-55A,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9606-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 8600pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0058 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 154 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055414118; BUK9606-55A /T3; BUK9606-55A /T3

Fig 18. SOT226 (I
Philips Semiconductors
9397 750 08416
Product data
Plastic single-ended package; low-profile 3 lead TO-220AB
DIMENSIONS (mm are the original dimensions)
Note
1. Terminals in this zone are not tinned.
UNIT
mm
VERSION
OUTLINE
SOT226
4.5
4.1
A
2
1.40
1.27
-PAK).
A 1
0.9
0.7
b
IEC
D
L
b 1
1.3
1.0
D 1
L 2
b 1
0.7
0.4
3-lead TO-220AB
c
low-profile
JEDEC
1
e
9.65
8.65
D
E
REFERENCES
2
e
Rev. 03 — 23 July 2001
D 1
1.5
1.1
0
3
BUK9506-55A; BUK9606-55A;
b
10.3
9.7
E
L 1
scale
EIAJ
5
2.54
e
10 mm
15.0
13.5
L
mounting
base
3.30
2.79
L 1
L 2
max
Q
3.0
(1)
A
A 1
PROJECTION
2.6
2.2
c
Q
EUROPEAN
BUK9E06-55A
© Philips Electronics N.V. 2001. All rights reserved.
ISSUE DATE
99-05-27
99-09-13
SOT226
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