BUK7514-55A,127 NXP Semiconductors, BUK7514-55A,127 Datasheet - Page 5

• Manufacturer Part Number: BUK7514-55A,127
• Description: MOSFET N-CH 55V 73A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7514-55A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 73A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2464pF @ 25V
• Power - Max: 166W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.014 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 73 A
• Power Dissipation: 149000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055646127; BUK7514-55A; BUK7514-55A

Philips Semiconductors
July 2000
TrenchMOS
Standard level FET
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
V
4
3
3
2
2
1
1
0
Fig.13. Typical capacitances, C
0.01
5
4
3
2
1
0
-100
I
Capacitance / nF
C = f(V
GS(TO)
D
VGS(TO) / V
0
= f(V
Fig.12. Sub-threshold drain current.
max.
min.
typ.
Fig.11. Gate threshold voltage.
= f(T
-50
GS)
DS
); conditions: V
; conditions: T
0.1
1
j
); conditions: I
0
transistor
2%
Tj / C
2
VDS/V
1
50
j
GS
= 25 ˚C; V
D
typ
= 1 mA; V
= 0 V; f = 1 MHz
Sub-Threshold Conduction
100
3
10
iss
, C
98%
150
BUK759-60
DS
DS
oss
4
= V
, C
= V
100
200
GS
Ciss
Coss
Crss
rss
GS
.
5
5
Fig.14. Typical turn-on gate-charge characteristics.
VGS / V
V
I
Fig.16. Normalised avalanche energy rating.
F
GS
120
110
100
90
80
70
60
50
40
30
20
10
= f(V
0
= f(Q
10
Fig.15. Typical reverse diode current.
20
9
8
7
6
5
4
3
2
1
0
W
WDSS%
0
SDS
DSS
G
); conditions: I
40
); conditions: V
% = f(T
10
60
[PICTURE]
mb
80
); conditions: I
20
Tmb / C
VDS = 14V
D
100
QG / nC
GS
= 50 A; parameter V
= 0 V; parameter T
120
30
Product specification
BUK7514-55A
BUK7614-55A
140
D
= 75 A
160
40
VDS = 44V
Rev 1.000
180
DS
j
50