BUK9535-100A,127 NXP Semiconductors, BUK9535-100A,127 Datasheet - Page 6

• Manufacturer Part Number: BUK9535-100A,127
• Description: MOSFET N-CH 100V 41A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9535-100A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 34 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 41A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 3573pF @ 25V
• Power - Max: 149W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.034 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 41 A
• Power Dissipation: 149000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055656127; BUK9535-100A; BUK9535-100A

Table 5:
T
Philips Semiconductors
9397 750 07808
Product specification
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C; t
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
I D
(A)
Characteristics
R DSon
160
140
120
100
(m )
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
80
60
40
20
40
35
30
25
20
0
0
0
p
= 300 s
2
20
…continued
V GS (V) = 3
4
40
6
V GS (V) =
3.2
60
8
3.4
V DS (V)
3.6
Conditions
I
Figure 15
I
V
4
3.8
I D (A)
S
S
GS
5
= 25 A; V
= 20 A; dI
03nd12
10
= 10 V; V
10
80
Rev. 01 — 22 January 2001
5
4
3
2.2
BUK9535-100A; BUK9635-100A
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
j
a
= 25 C; I
=
of gate-source voltage; typical values.
factor as a function of junction temperature.
a
R DSon
--------------------------- -
R
(m )
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
DSon 25 C
35
30
25
20
R
3
2
1
0
-60
DSon
2
D
Min
= 25 A
-20
4
20
TrenchMOS™ logic level FET
Typ
0.85
68
230
60
6
© Philips Electronics N.V. 2001. All rights reserved.
100
8
Max
1.2
140
V GS (V)
T
j
( o C)
03aa29
180
10
Unit
V
ns
nC
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