ATP113-TL-H SANYO, ATP113-TL-H Datasheet - Page 2

• Manufacturer Part Number: ATP113-TL-H
• Description: MOSFET P-CH 60V 35A ATPAK
• Manufacturer: SANYO

Specifications of ATP113-TL-H

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 35A
• Mounting Type: Surface Mount
• Package / Case: ATPAK (2 leads+tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -
• Rds On (max) @ Id, Vgs: -
• Other names: 869-1077-2

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
--35
--30
--25
--20
--15
--10
--10V
--5
P.G
0
0V
0
PW=10μs
D.C.≤1%
Tc=25 ° C
Single pulse
--0.2
V IN
Parameter
--0.4
Drain-to-Source Voltage, V DS -- V
V IN
--0.6 --0.8 --1.0
G
50Ω
I D -- V DS
V DD = --30V
D
S
I D =18A
R L =1.67Ω
--1.2 --1.4
ATP113
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
V OUT
--1.6
--1.8
I D =- -1mA, V GS =0V
V DS =- -60V, V GS =0V
V GS =±16V, V DS =0V
V DS =- -10V, I D =- -1mA
V DS =- -10V, I D =--18A
I D =- -18A, V GS =- -10V
I D =- -9A, V GS =- -4.5V
I D =- -5A, V GS =- -4V
V DS =--20V, f=1MHz
V DS =--20V, f=1MHz
V DS =--20V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =--30V, V GS =--10V, I D =--35A
V DS =--30V, V GS =--10V, I D =--35A
V DS =--30V, V GS =--10V, I D =--35A
I S =--35A, V GS =0V
IT15601
--2.0
ATP113
Conditions
--60
--50
--40
--30
--20
--10
0
0
0
V DS = --10V
Single pulse
--0.5
--1.0
Gate-to-Source Voltage, V GS -- V
--1.5
min
--1.2
I D -- V GS
--60
--2.0
Ratings
--2.5
typ
--0.98
2400
22.5
250
195
125
250
200
7.5
15
55
12
37
27
29
--3.0
max
--3.5
--2.6
29.5
--1.5
±10
--1
38
44
No. A1755-2/4
--4.0
IT15602
Unit
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V
--4.5