BUK7635-55A,118 NXP Semiconductors, BUK7635-55A,118 Datasheet - Page 6

• Manufacturer Part Number: BUK7635-55A,118
• Description: MOSFET N-CH 55V 35A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7635-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 872pF @ 25V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 85000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056192118; BUK7635-55A /T3; BUK7635-55A /T3

Table 5:
T
Philips Semiconductors
9397 750 07646
Product specification
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C; t
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
I D
(A)
Characteristics
120
100
80
60
40
20
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
R DSon
0
(m )
0
80
70
60
50
40
30
20
p
0
= 300 s
5.5
2
20
6 6.5 7
V GS (V) =
…continued
4
40
12
6
14
8
V GS (V) =
60
16
8
9
V DS (V)
18
Conditions
I
Figure 15
I
V
80
S
S
10
03nb81
GS
= 25 A; V
= 20 A; dI
I D (A)
03nb82
10
= 10 V; V
Rev. 01 — 10 November 2000
11
10.5
9.5
8.5
7.5
6.5
20
5.5
4.5
100
GS
S
BUK7535-55A; BUK7635-55A
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
j
a
= 25 C; I
=
of gate-source voltage; typical values.
factor as a function of junction temperature.
a
--------------------------- -
R
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
DSon 25 C
R DSon
2
1
0
R
(m )
-60
50
45
40
35
30
25
20
DSon
D
Min
5
= 17 A
-20
TrenchMOS™ standard level FET
20
10
Typ
0.85
40
80
60
© Philips Electronics N.V. 2000. All rights reserved.
100
15
140
Max
1.2
T
V GS (V)
j
( o C)
03aa28
03nb80
180
20
Unit
V
ns
nC
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