BUK9623-75A,118 NXP Semiconductors, BUK9623-75A,118 Datasheet - Page 5

• Manufacturer Part Number: BUK9623-75A,118
• Description: MOSFET N-CH 75V 53A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9623-75A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 3120pF @ 25V
• Power - Max: 138W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 53 A
• Power Dissipation: 138000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056476118; BUK9623-75A /T3; BUK9623-75A /T3

8. Characteristics
Table 5:
T
Philips Semiconductors
9397 750 07582
Product specification
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
j
d
s
(BR)DSS
GS(th)
DSon
iss
oss
rss
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
Conditions
I
Figure 9
V
V
V
Figure 7
V
V
V
f = 1 MHz;
V
V
from drain lead 6mm from
package to centre of die
from contact screw on
mounting base to centre of
die SOT78
from upper edge of drain
mounting base to centre of
die SOT404
from source lead to source
bond pad
D
D
DS
GS
GS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
T
T
= 0.25 mA; V
= 1 mA; V
j
j
j
j
j
j
j
j
j
j
j
= 75 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 10 V; V
= 5 V; I
= 25 C
= 175 C
= 4.5 V; I
= 25 C
= 10 V; I
= 25 C
= 0 V; V
= 30 V; R
= 5 V; R
Rev. 01 — 10 October 2000
and
Figure 12
D
BUK9523-75A; BUK9623-75A
DS
DS
G
D
8
= 25 A;
D
GS
L
= 10 ;
= 25 A;
DS
= V
= 25 A;
GS
= 25 V;
= 1.2 ;
= 0 V
= 0 V
= 0 V
GS
;
Min
75
70
1
0.5
TrenchMOS™ logic level FET
Typ
1.5
0.05
2
18
17
2340
319
215
24
141
142
108
4.5
3.5
2.5
7.5
© Philips Electronics N.V. 2000. All rights reserved.
Max
2
2.3
10
500
100
23
49
26
22
3120
383
295
Unit
V
V
V
V
V
nA
m
m
m
m
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
nH
5 of 15
A
A