BUK9240-100A,118 NXP Semiconductors, BUK9240-100A,118 Datasheet - Page 6
![MOSFET N-CH 100V 33A DPAK](/photos/5/32/53207/dpak_sml.jpg)
BUK9240-100A,118
Manufacturer Part Number
BUK9240-100A,118
Description
MOSFET N-CH 100V 33A DPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Specifications of BUK9240-100A,118
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
38.6 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
33A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
3072pF @ 25V
Power - Max
114W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0386 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
33 A
Power Dissipation
114000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056252118
BUK9240-100A /T3
BUK9240-100A /T3
BUK9240-100A /T3
BUK9240-100A /T3
NXP Semiconductors
6. Characteristics
Table 6.
BUK9240-100A
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
V
V
see
V
T
V
R
measured from drain lead from package
to centre of die ; T
measured from source lead from
package to source bond pad ;
T
I
see
I
V
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
S
S
j
j
DS
DS
DS
DS
GS
GS
GS
GS
GS
DS
GS
G(ext)
= 25 °C; see
= 25 °C
= 25 A; V
= 20 A; dI
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
Figure 11
Figure 11
Figure 11
Figure
Figure
Figure 15
= 100 V; V
= 100 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= 5 V; I
= 10 V; I
= 4.5 V; I
= 5 V; I
= 0 V; V
= -10 V; V
= 10 Ω; T
Rev. 02 — 15 June 2010
12; see
12; see
D
D
GS
S
DS
DS
DS
GS
GS
DS
D
/dt = -100 A/µs;
= 25 A; T
D
= 25 A; T
L
DS
= 25 A; T
= 0 V; T
GS
GS
= V
= V
= V
= 25 A; T
Figure 14
= 1.2 Ω; V
GS
GS
= 10 V; T
= -10 V; T
= 25 V; f = 1 MHz;
j
= 25 °C
= 30 V; T
= 0 V; T
= 0 V; T
j
= 0 V; T
= 0 V; T
GS
GS
GS
= 25 °C
Figure 13
Figure 13
; T
; T
; T
j
j
j
= 25 °C;
= 175 °C;
= 25 °C;
j
j
j
j
j
j
= -55 °C;
= 25 °C;
= 175 °C;
= 25 °C
j
= 25 °C
GS
= 25 °C
j
j
= 25 °C
j
j
j
= 175 °C
= 25 °C
= 25 °C
= -55 °C
= 25 °C
= 5 V;
N-channel TrenchMOS logic level FET
BUK9240-100A
Min
100
89
-
1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
1.5
-
-
0.05
2
2
-
33
-
34
2304
222
151
20
135
125
90
2.5
7.5
0.85
60
240
© NXP B.V. 2010. All rights reserved.
266.4
-
Max
-
-
2.3
2
-
500
10
100
100
100
38.6
44.6
40
3072
207
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nH
nH
V
ns
nC
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