PHP18NQ11T,127 NXP Semiconductors, PHP18NQ11T,127 Datasheet - Page 10

• Manufacturer Part Number: PHP18NQ11T,127
• Description: MOSFET N-CH 110V 18A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHP18NQ11T,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 79W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 18A
• Drain To Source Voltage (vdss): 110V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 9A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 79000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058144127::PHP18NQ11T::PHP18NQ11T

NXP Semiconductors
8. Revision history
Table 7.
PHP18NQ11T_2
Product data sheet
Document ID
PHP18NQ11T_2
Modifications:
PHP18NQ11T-01 (9397
750 12305)
Revision history
Release date
20100310
20031113
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data
Rev. 02 — 10 March 2010
Change notice
-
-
N-channel TrenchMOS standard level FET
PHP18NQ11T
Supersedes
PHP18NQ11T-01
-
© NXP B.V. 2010. All rights reserved.
10 of 13