BUK9618-55A,118 NXP Semiconductors, BUK9618-55A,118 Datasheet - Page 6

• Manufacturer Part Number: BUK9618-55A,118
• Description: MOSFET N-CH 55V 61A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9618-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 61A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 61 A
• Power Dissipation: 136000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056812118; BUK9618-55A /T3; BUK9618-55A /T3

Philips Semiconductors
Table 5:
T
9397 750 08461
Product data
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
R DSon
(m )
j
j
= 25 C; t
= 25 C
I D
(A)
function of drain-source voltage; typical values.
40
35
30
25
20
15
10
of drain current; typical values.
250
200
150
100
50
5
0
0
0
Characteristics
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
0
V GS (V) =
p
= 300 s
2
50
3
6
3.4
4
8
…continued
100
3.8
4
6
V GS (V) = 10
150
5
8
I D (A)
V DS (V)
Conditions
I
IS = 20 A; dI
V
03ne45
5
S
2.2
GS
= 20 A; V
200
3
4
10
= 10 V; V
Rev. 01 — 27 August 2001
BUK9518-55A; BUK9618-55A
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
Figure 15
T
a
R DSon
j
= 25 C; I
(m )
=
of gate-source voltage; typical values.
factor as a function of junction temperature.
a
1.5
0.5
20
18
16
14
12
10
2
1
0
---------------------------- -
R
-60
DSon 25 C
3
R
DSon
D
= 25 A
5
Min
0
7
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
60
9
Typ
0.85
53
101
11
120
13
T j (ºC)
V GS (V)
03ne89
Max
1.2
180
15
6 of 14
Unit
V
ns
nC