BUK9535-55A,127 NXP Semiconductors, BUK9535-55A,127 Datasheet - Page 3

• Manufacturer Part Number: BUK9535-55A,127
• Description: MOSFET N-CH 55V 34A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9535-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 32 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 1173pF @ 25V
• Power - Max: 85W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.032 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 34 A
• Power Dissipation: 85 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 934056191127; BUK9535-55A; BUK9535-55A

Philips Semiconductors
AVALANCHE LIMITING VALUE
1 For maximum permissible repetitive avalanche current see fig.18.
February 2000
TrenchMOS
Logic level FET
SYMBOL PARAMETER
W
DSS
ID% = 100 I
120
110
100
Fig.2. Normalised continuous drain current.
120
110
100
1
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
Drain-source non-repetitive
unclamped inductive turn-off
energy
20
PD% = 100 P
20
D
/I
40
40
D 25 ˚C
transistor
60
60
= f(T
80
80
Tmb / C
Tmb / C
D
mb
/P
); conditions: V
Normalised Current Derating
D 25 ˚C
100
100
Normalised Power Derating
120
120
= f(T
140
140
mb
)
160
160
GS
CONDITIONS
I
V
D
180
180
GS
= 14 A; V
5 V
= 5 V; R
3
DD
GS
= 50 ; T
25 V;
0.01
0.1
10
1E-07
I
1
D
& I
ID/A
Zth/(K/W)
Fig.3. Safe operating area. T
1000
100
10
Fig.4. Transient thermal impedance.
1
DM
1
0.05
0.02
mb
0.5
0.2
0.1
0
Z
= f(V
= 25 ˚C
th j-mb
RDS(ON)=VSD/ID
1E-05
DS
= f(t); parameter D = t
); I
DM
t/s
DC
MIN.
single pulse; parameter t
1E-03
-
VSD/V
10
TYP.
-
Product specification
BUK9535-55A
BUK9635-55A
1E-01
mb
MAX.
= 25 ˚C
p
/T
49
1us
10us
100us
1ms
10ms
tp=
Rev 1.000
100
1E+01
UNIT
mJ
p