PSMN085-150K,518 NXP Semiconductors, PSMN085-150K,518 Datasheet - Page 8

• Manufacturer Part Number: PSMN085-150K,518
• Description: MOSFET N-CH 150V 4.1A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN085-150K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 4.1A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1310pF @ 25V
• Power - Max: 3.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.085 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 3.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056596518; PSMN085-150K /T3; PSMN085-150K /T3

NXP Semiconductors
PSMN085-150K_2
Product data sheet
Fig 13. Forward transconductance as a function of
(S)
30
20
10
g
0
fs
drain current; typical values
0
V
DS
> I
D
X R
DSon
10
T
j
= 25 °C
20
150 °C
All information provided in this document is subject to legal disclaimers.
I
D
(A)
03ae19
30
Rev. 02 — 1 March 2010
N-channel TrenchMOS SiliconMAX standard level FET
Fig 14. Source current as a function of source-drain
(A)
I
S
30
20
10
0
voltage; typical values
0
V
GS
= 0 V
0.4
PSMN085-150K
150 °C
0.8
T
© NXP B.V. 2010. All rights reserved.
j
V
= 25 °C
SD
(V)
03ae20
1.2
8 of 13