BUK7520-55A,127 NXP Semiconductors, BUK7520-55A,127 Datasheet - Page 9

• Manufacturer Part Number: BUK7520-55A,127
• Description: MOSFET N-CH 55V 54A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7520-55A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 54A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1592pF @ 25V
• Power - Max: 118W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 54 A
• Power Dissipation: 118000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056255127; BUK7520-55A; BUK7520-55A

NXP Semiconductors
BUK7520-55A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
a
2.4
1.8
1.2
0.6
0
−60
factor as a function of junction temperature
0
60
(A)
I
S
120
100
80
60
40
20
120
0
0.0
All information provided in this document is subject to legal disclaimers.
T
j
(°C)
03aa28
180
Rev. 02 — 15 June 2010
0.5
T
j
= 175 °C
Fig 14. Input, output and reverse transfer capacitances
C
C
C
(pF)
iss
oss
rss
1.0
,
,
2500
2000
1500
1000
500
10
0
as a function of drain-source voltage; typical
values
T
V
−2
j
C
C
C
SD
= 25 °C
N-channel TrenchMOS standard level FET
iss
oss
rss
(V)
03nc58
1.5
10
−1
BUK7520-55A
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03nc65
(V)
10
2
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