BUK9225-55A,118 NXP Semiconductors, BUK9225-55A,118 Datasheet

MOSFET N-CH 55V 43A DPAK

BUK9225-55A,118

Manufacturer Part Number
BUK9225-55A,118
Description
MOSFET N-CH 55V 43A DPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9225-55A,118

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
43A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
1724pF @ 25V
Power - Max
94W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.022 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
43 A
Power Dissipation
94000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056698118
BUK9225-55A /T3
BUK9225-55A /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
P
I
D
DS
tot
BUK9225-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 7 February 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V and 24 V loads
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
Conditions
T
V
see
T
j
mb
GS
≥ 25 °C; T
Figure
= 25 °C; see
= 5 V; T
1; see
mb
j
≤ 175 °C
= 25 °C;
Figure 2
Figure 3
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
Min
-
-
-
Product data sheet
Typ
-
-
-
Max Unit
55
43
94
V
A
W

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BUK9225-55A,118 Summary of contents

Page 1

... BUK9225-55A N-channel TrenchMOS logic level FET Rev. 02 — 7 February 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... R GS avalanche energy °C; unclamped j(init) Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9225-55A N-channel TrenchMOS logic level FET Min = Figure 12; ≤ sup = 5 V ...

Page 3

... P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9225-55A N-channel TrenchMOS logic level FET Min - - -15 Figure 1; - Figure 1 - ≤ 10 µs; [ -55 - ° Ω ...

Page 4

... I DSon δ D. Conditions see Figure 4 Single Shot −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9225-55A N-channel TrenchMOS logic level FET 03ne70 = 10 μ 100 μ 100 (V) DS Min Typ - - - 71.4 03ne71 t p δ = ...

Page 5

... ° ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9225-55A N-channel TrenchMOS logic level FET Min Typ Max 1 2 500 - 2 100 ...

Page 6

... DSon 10 (mΩ 2 (V) DS Fig 6. 03aa36 g fs (S) max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9225-55A N-channel TrenchMOS logic level FET Drain-source on-state resistance as a function of gate-source voltage; typical values Forward transconductance as a function of drain current ...

Page 7

... Fig 10. Gate-source voltage as a function of gate 03aa33 50 R DSon (mΩ 120 180 ( ° Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9225-55A N-channel TrenchMOS logic level FET charge; typical values 3.8 3.6 3 ...

Page 8

... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.2 0.4 0.6 0.8 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9225-55A N-channel TrenchMOS logic level FET C iss C oss 500 C rss 0 −2 − function of drain-source voltage; typical values 03na01 = 25 ° ...

Page 9

... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9225-55A N-channel TrenchMOS logic level FET min 10.4 2.95 0.5 2.285 4.57 9 ...

Page 10

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK9225-55A v.2 20110207 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 11

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9225-55A N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9225-55A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 February 2011 Document identifier: BUK9225-55A ...

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