BSP030,115 NXP Semiconductors, BSP030,115 Datasheet
BSP030,115
Specifications of BSP030,115
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BSP030,115 Summary of contents
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BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: BSP030 in SOT223. 2. Features TrenchMOS™ technology Fast switching Low on-state resistance Logic ...
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Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...
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Philips Semiconductors 120 P der (%) 100 100 P tot P = ---------------------- 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point ...
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Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder th(j-sp) point R thermal resistance from junction to ambient th(j-a) 7.1 Transient thermal impedance Fig 4. Transient thermal impedance from junction to ...
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Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise specified j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage I GS(th) I drain-source leakage current DSS I gate-source leakage current GSS ...
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Philips Semiconductors Table 5: Characteristics …continued unless otherwise specified j Symbol Parameter Source-drain diode V source-drain (diode forward) SD voltage t reverse recovery time rr Q recovered charge ...
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Philips Semiconductors 3 V GS(th) (V) 2.5 typ 2 1.5 min 1 0.5 0 - Fig 9. Gate-source threshold voltage as a function of junction temperature. 16 ...
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Philips Semiconductors ( 150 0.2 0.4 0 and 150 ...
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Philips Semiconductors 9. Package outline Plastic surface mounted package; collector pad for good heat transfer; 4 leads DIMENSIONS (mm are the original dimensions) UNIT 1.8 ...
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Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 04 20000726 HZG336 Product specification; fourth version; supersedes BSP030_3 of 970313. Converted from VDMOS (Nijmegen) to TrenchMOS™ technology (Hazel Grove). 03 19970313 - Product specification; third version; ...
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Philips Semiconductors 11. Data sheet status Datasheet status Product status Definition Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data ...
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Philips Semiconductors Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. ...
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Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...