BUK9245-55A,118 NXP Semiconductors, BUK9245-55A,118 Datasheet - Page 7

MOSFET N-CH 55V 28A SOT428

BUK9245-55A,118

Manufacturer Part Number
BUK9245-55A,118
Description
MOSFET N-CH 55V 28A SOT428
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9245-55A,118

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
28A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
14nC @ 5V
Input Capacitance (ciss) @ Vds
1006pF @ 25V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.04 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
28 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934056853118
BUK9245-55A /T3
BUK9245-55A /T3
Philips Semiconductors
9397 750 08559
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
V GS(th)
j
= 1 mA; V
= 25 C; V
(V)
g fs
(S)
junction temperature.
drain current; typical values.
2.5
1.5
0.5
20
15
10
5
0
2
1
0
-60
0
DS
DS
= V
5
= 25 V
0
GS
10
max
typ
min
60
15
120
20
T j (
I D (A)
o
03aa33
C)
180
25
Rev. 01 — 11 October 2001
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
GS
= 25 C; V
C
(pF)
2100
1800
1500
1200
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
(A)
gate-source voltage.
as a function of drain-source voltage; typical
values.
I D
900
600
300
= 0 V; f = 1 MHz
0
10 -2
0
DS
0.5
= V
10 -1
GS
1
min
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
BUK9245-55A
1.5
1
C rss
C iss
C oss
typ
2
max
10
2.5
V DS (V)
V GS (V)
03aa36
03nf97
10 2
3
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