BSP225,115 NXP Semiconductors, BSP225,115 Datasheet - Page 8
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BSP225,115
Manufacturer Part Number
BSP225,115
Description
MOSFET P-CH 250V 225MA SOT223
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.BSP225115.pdf
(12 pages)
Specifications of BSP225,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 Ohm @ 200mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
225mA
Vgs(th) (max) @ Id
2.8V @ 1mA
Input Capacitance (ciss) @ Vds
90pF @ 25V
Power - Max
1.5W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
15 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.225 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge (qg) @ Vgs
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934000510115
BSP225 T/R
BSP225 T/R
BSP225 T/R
BSP225 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP225,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Philips Semiconductors
PACKAGE OUTLINE
April 1995
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
P-channel enhancement mode vertical
D-MOS transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT223
1.8
1.5
A
0.10
0.01
A
1
1
y
0.80
0.60
b
p
IEC
e
3.1
2.9
1
b
1
b
0.32
0.22
D
1
e
c
2
b
6.7
6.3
D
p
JEDEC
4
3.7
3.3
E
REFERENCES
3
0
4.6
e
w
B
M
2.3
e
B
scale
1
EIAJ
8
2
c
7.3
6.7
H
E
4 mm
A
1.1
0.7
L
1
p
0.95
0.85
Q
0.2
v
H
E
E
detail X
0.1
w
PROJECTION
EUROPEAN
0.1
y
A
L
p
Q
Product specification
X
ISSUE DATE
BSP225
96-11-11
97-02-28
v
A
M
A
SOT223