PHK04P02T,518 NXP Semiconductors, PHK04P02T,518 Datasheet

MOSFET P-CH 16V 4.66A 8-SOIC

PHK04P02T,518

Manufacturer Part Number
PHK04P02T,518
Description
MOSFET P-CH 16V 4.66A 8-SOIC
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PHK04P02T,518

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
16V
Current - Continuous Drain (id) @ 25° C
4.66A
Vgs(th) (max) @ Id
600mV @ 1mA
Gate Charge (qg) @ Vgs
7.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
528pF @ 12.8V
Power - Max
5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.125 Ohms
Drain-source Breakdown Voltage
- 16 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
4.66 A
Power Dissipation
5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057290518
PHK04P02T /T3
PHK04P02T /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using vertical D-MOS technology. This product is designed and qualified for use
in computing, communications, consumer and industrial applications only.
Table 1.
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
D
DS
tot
DSon
GD
PHK04P02T
P-channel vertical D-MOS logic level FET
Rev. 02 — 14 December 2010
Suitable for high frequency
applications due to fast switching
characteristics
Battery powered applications
Parameter
drain-source voltage
drain current
total power
dissipation
drain-source on-state
resistance
gate-drain charge
Quick reference data
Conditions
T
T
V
V
V
V
j
sp
GS
GS
GS
DS
≥ 25 °C; T
= 25 °C
= -10 V; T
= -2.5 V; I
= -4.5 V; I
= -4.5 V; I
j
≤ 150 °C
D
D
D
j
= 25 °C
= -1 A; T
= -1 A; T
= -1 A;
Suitable for logic level gate drive
sources
Suitable for very low gate drive
sources voltage
High-speed digital interfaces
j
j
= 25 °C
= 25 °C
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
117
80
1.83 -
Max Unit
-16
-4.6
6
5
150
120
V
A
W
mΩ
mΩ
nC

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PHK04P02T,518 Summary of contents

Page 1

PHK04P02T P-channel vertical D-MOS logic level FET Rev. 02 — 14 December 2010 1. Product profile 1.1 General description Logic level P-channel enhancement mode Field-Effect Transistor (FET plastic package using vertical D-MOS technology. This product is designed and ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S source 2 S source 3 S source 4 G gate 5 D drain 6 D drain 7 D drain 8 D drain 3. Ordering information Table 3. Ordering information Type number Package Name PHK04P02T SO8 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134) ...

Page 3

... NXP Semiconductors 100 P tot (%) Fig 1. Normalised power dissipation as a function of ambient temperature ° single pulse sp DM Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PHK04P02T Product data sheet 001aam073 120 I D (%) 120 160 T (°C) a Fig ( DS(on) ...

Page 4

... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-sp) solder point Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration PHK04P02T Product data sheet Conditions mounted on metal clad substrate th(j-sp 0.5 (K/W) 10 0.2 ...

Page 5

... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage GS(th) I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge GD C input capacitance ...

Page 6

... NXP Semiconductors − (A) −4.5 −4 −2.5 −1.8 −3 −2 −1 0 −0.5 −1 °C j Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values − (A) − ° −3 −2 −1 0 −0.5 −1 > DSon Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values 1 ...

Page 7

... NXP Semiconductors − (A) −3 10 −4 10 −5 10 −6 10 −7 10 −1.0 −0.8 −0 ° Fig 11. Sub-threshold drain current as a function of gate-source voltage − (V) −4 −3 −2 − ° Fig 13. Gate-source voltage as a function of turn-on gate charge; typical values PHK04P02T Product data sheet 001aam083 − ...

Page 8

... NXP Semiconductors 7. Package outline SO8: plastic small outline package; 8 leads; body width 3 pin 1 index 1 DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.25 1.45 mm 1.75 0.25 0.10 1.25 0.010 0.057 inches 0.069 0.01 0.004 0.049 Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. ...

Page 9

... Release date PHK04P02T v.2 20101214 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. PHK04P02T v.1 20020501 PHK04P02T Product data sheet ...

Page 10

... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 11

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 12

... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .9 9 Legal information .10 9.1 Data sheet status ...

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