PMK50XP,518 NXP Semiconductors, PMK50XP,518 Datasheet - Page 8

• Manufacturer Part Number: PMK50XP,518
• Description: MOSFET P-CH FET 20V 7.9A 8-SOIC
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMK50XP,518

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.9A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 20V
• Power - Max: 5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061118518

NXP Semiconductors
PMK50XP
Product data sheet
Fig 13. Input, output and reverse transfer capacitances
(pF)
10
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
GS
= 0 V; f = 1 MHz
1
10
-V
C
All information provided in this document is subject to legal disclaimers.
C
C
DS
rss
iss
oss
03aq08
(V)
10
Rev. 02 — 28 April 2010
2
Fig 14. Source current as a function of source-drain
P-channel TrenchMOS extremely low level FET
(A)
-I
S
20
15
10
5
0
voltage; typical values
V
0
GS
= 0 V
0.5
150 °C
1
T
PMK50XP
j
= 25 °C
-V
© NXP B.V. 2010. All rights reserved.
SD
003aab278
(V)
1.5
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