PMK50XP,518 NXP Semiconductors, PMK50XP,518 Datasheet - Page 8
![MOSFET P-CH FET 20V 7.9A 8-SOIC](/photos/5/44/54425/568-8-soic_sot96-1_sml.jpg)
PMK50XP,518
Manufacturer Part Number
PMK50XP,518
Description
MOSFET P-CH FET 20V 7.9A 8-SOIC
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PMK50XP518.pdf
(13 pages)
Specifications of PMK50XP,518
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 2.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
7.9A
Vgs(th) (max) @ Id
950mV @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Input Capacitance (ciss) @ Vds
1020pF @ 20V
Power - Max
5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934061118518
NXP Semiconductors
PMK50XP
Product data sheet
Fig 13. Input, output and reverse transfer capacitances
(pF)
10
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
GS
= 0 V; f = 1 MHz
1
10
-V
C
All information provided in this document is subject to legal disclaimers.
C
C
DS
rss
iss
oss
03aq08
(V)
10
Rev. 02 — 28 April 2010
2
Fig 14. Source current as a function of source-drain
P-channel TrenchMOS extremely low level FET
(A)
-I
S
20
15
10
5
0
voltage; typical values
V
0
GS
= 0 V
0.5
150 °C
1
T
PMK50XP
j
= 25 °C
-V
© NXP B.V. 2010. All rights reserved.
SD
003aab278
(V)
1.5
8 of 13