BSS192,115 NXP Semiconductors, BSS192,115 Datasheet - Page 7
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BSS192,115
Manufacturer Part Number
BSS192,115
Description
MOSFET P-CH 240V 0.2A SOT89
Manufacturer
NXP Semiconductors
Datasheet
1.BSS192115.pdf
(12 pages)
Specifications of BSS192,115
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Mounting Type
Surface Mount
Power - Max
1W
Fet Type
MOSFET P-Channel, Metal Oxide
Vgs(th) (max) @ Id
2.8V @ 1mA
Current - Continuous Drain (id) @ 25° C
200mA
Drain To Source Voltage (vdss)
240V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 Ohm @ 200mA, 10V
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
12 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
200 mS, 60 mS
Drain-source Breakdown Voltage
240 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.2 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933943950115::BSS192 T/R::BSS192 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSS192,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Philips Semiconductors
PACKAGE OUTLINE
2002 May 22
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
P-channel enhancement mode
vertical D-MOS transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT89
1.6
1.4
A
0.48
0.35
b 1
0.53
0.40
b 2
w
IEC
M
1.8
1.4
b 3
0.44
0.37
1
c
b 1
e
1
TO-243
JEDEC
4.6
4.4
D
0
b 3
D
e
REFERENCES
2
2.6
2.4
E
b 2
3.0
e
SC-62
scale
EIAJ
7
2
3
1.5
e 1
B
A
E
L
4.25
3.75
H E
min.
0.8
4 mm
L
0.13
w
PROJECTION
EUROPEAN
c
H E
Product specification
ISSUE DATE
BSS192
97-02-28
99-09-13
SOT89